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Ordering number : EN8214
Monolithic Linear IC
LA5683T
Overview
4ch Switching Regulator Control IC
The LA5683T is 4ch switching regulator control IC.
Functions
* Low-voltage operation (minimum 1.8V). * OUT1 and OUT2 can drive external PNP transistors. * OUT3 and OUT4 can drive external NPN transistors. * 4-independent-channel standby circuit built-in. * 1% accuracy reference voltage. * Supports MOS transistor drive. * Channel 2 dead time internally set fixed, duty cycle = 100%. (The dead time for channels 1, 3, and 4 are set externally.)
Specifications
Maximum Ratings at Ta = 25C
Parameter Supply voltage 1 Allowable power dissipation Operating temperature Storage temperature Symbol VCC max Pd max Topr Tstg Independent IC Conditions Ratings 9 0.4 -20 to +85 -55 to +150 Unit V W C C
Operating Conditions at Ta = 25C
Parameter Supply voltage 1 Supply voltage 2 Output sync current Reference voltage output current Timing resistor Timing capacity Triangular wave frequency Symbol VCC VBIAS ISINK max IREF RT CT fOSC Conditions Ratings 1.8 to 8 1.8 to 8 0 to 30 0 to 1 3 to 30 100 to 1000 0.1 to 1 Unit V V mA mA k pF MHz
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
92706 / 40506 MS IM B8-7242 No.8214-1/12
LA5683T
Electrical Characteristics at Ta = 25C, VCC = VSTBY1 to 4 = 3V, SCP = 0V
Parameter [Error amplifier] IN+ pin internal bias voltage Output L level voltage Output H level voltage [Protection circuit] Threshold voltage SCP pin current [Idle period adjustment block] Input bias current Threshold voltage 1 Threshold voltage 2 Threshold voltage 3 Threshold voltage 4 CH1 CH1 CH3 to CH4 CH3 to CH4 IB_DTC VTH1_DTC VTH2_DTC VTH3_DTC VTH4_DTC IN1- = 0V, duty cycle = 100% IN1- = 0V, duty cycle = 0% IN3, IN4- = 0V, duty cycle = 100% IN3, IN4- = 0V, duty cycle = 0% -15 0.67 0.35 0.72 0.4 -3 0.77 0.4 0.8 0.45 0.87 0.45 0.88 0.5 A V V V V VSCP ISCP 1.1 1.25 3.9 1.4 V A CH1 to CH4 CH1 to CH4 VB VLow_FB1 VHi _FB1 Pins IN1+, IN2+, IN3+, and IN4+ IN1- = 2.0 IFB1 = 20A IN1- = 0V IFB1 = -20A 2.25 0.500 0.506 0.512 1 V V V Symbol Conditions min Ratings typ max Unit
[Software start block (CH1 to CH4)] Software start current Software start resistance CH1 to CH4 CH1 to CH4 ISF RSF IN1, 2- = 0V DTC1 = 0V VOUT1, 2 = 2.7V ICAPH = 0.5mA IN1, 2- = 0V DTC1 = 1.0V VOUT1, 2 = 2.3V [Output blocks and 4 (CH3 and CH4)] OUT pin source current OUT pin sink current OUT pin high level voltage OUT pin low level voltage [Triangular wave form generator block] Current setting pin voltage Output current Output current ratio Oscillation frequency [Reference voltage block] Reference voltage Line regulation Load regulation [STBY circuit] On voltage Off voltage Pin input current [All circuits] Operating-time current drain Standby-time current drain ICC1 ICC2 FB1, 2, 3, 4 = 1.5V DTC1, 3, 4 = 1.5V VSTBY1 to 3 = 0V 15 18 1 mA A VON_STBY VOFF_STBY IIN_STBY VSTBY1 to 4 = 3V 1.15 0.2 70 V V A VREF VLN_REF VLD_REF IREF = -1mA VCC = 1.8V to 8V IREF = -0.1mA to -1mA 1.244 1.257 1.270 10 10 V mV mV VT_RT IOH_CT IO_CT fOSC1 RT = 5.6k VCT = 0.5V, RT = 5.6k 0.8 380 1.190 1.260 230 1.0 440 1.2 500 kHz 1.330 V A IOUT34_SOUR IOUT34_SINK VOUT34_Hi VOUT34_Low VOUT3, 4 = 0.9V DTC3, 4 = 1.0V IN3, 4 = 0V VOUT3, 4 = 0.3V DTC3, 4 = 1.0V IN3, 4 = 1.0V IOUT3, 4 = -10mA DTC3, 4 = 1.0V IN3, 4 = 0V IOUT3, 4 = 10mA DTC3, 4 = 0V IN3, 4 = 1.0V 20 30 2 0.2 30 40 mA mA V V CSOFT = 0V 3.16 160 3.95 200 4.74 240 A k
[Output blocks 1 and 2 (CH1 and CH2)] OUT pin source current OUT pin sink current IOUT12_SOUR IOUT12_SINK 10 35 45 55 mA mA
No.8214-2/12
LA5683T
Package Dimensions
unit : mm 3253B
9.75 36 19
1.2
Pd max - Ta
Allowable power dissipation, Pd max - W
1.0
Mounted on a thermal evaluation board
0.90
0.8
5.6
7.6
0.5
0.6
(0.5) (0.63)
1 0.18
18 0.15
Independent IC
0.4
0.47 0.40
1.2max
(1.0)
0.2
0.21
0.08
0 --20
0
20
40
60
80
100 ILA07007
Ambient temperature, Ta - C
SANYO : TSSOP36(275mil)
Pin Assignment
No.8214-3/12
LA5683T
Block Diagram and Application Circuit Examples 1
2-dry-battery (1.8V to 3.2V) configuration
C4=0.022F
C5=1F
25
28
C17=10F
VREF
VCC
SCP
R3=18.66k R2=15k
VCC SCP DTC1 33 VREF CAPH1
9 Q1 : CPH3121
Co1=2.2F
T1 1
4
D2 : SBS005
VO1A=15V/15mA
C18=33pF
34 + + IN1FB1 35 36
C1=1000pF
3 D1 : 2 SBS004 6
Co4=3.3F Co3=3.3F
VO1=3.3V/140mA
to VO1
R4b=1.3k R4a=5.1k R5=27k
CAPL1 + OUT1
Rb1=180
7, 8
5
D3 : SBS004
Co5=3.3F
30 R6=100 31
VO1B=-7.5V/10mA
Cb1=4700pF
C10=1F
CAPH2 4 CAPL2 + + 7 IN2FB2 3 + VS OUT2
to VO2
R7b=0 R8=5.1k R7a=10k
C2=1000pF
C9=0.047F CSOFT1 32
Q2 : CPH3121
Co7=4.7F
L4 : 22H
Co9=10F
VO2=1.5V/200mA
2 1
D5 : SBS004
R9=100 6 C11=0.047F
R10= 10k C12=1F
Rb2=180 VBIAS
CSOFT2 5
16
C3=10F
Cb2=4700pF
to VO3
R12b=1.1k R13=5.1k R12a=27k C19=33pF
R11=16k
14
DTC3
+ + -
+ + -
OUT3
L6=6.8H
Co10=4.7F
D6 : SBS004
Co12=10F
Q100 : CPH3307 VO3=3.3V/500mA
Ro4=100k
17
R14=100
11 12
IN3FB3
Ro5=1k Ro10=1k
C13=0.047F
C14=1F
Q3 : MCH3409
Ro7=47k
CSOFT3 13
Ro6=47k
to STBY3
R17b=5.6k R18=5.1k R17a=110k
R15= 9.75k
to VO4
C20=33pF
Q101 : CPH3215
R16=16k
15
DTC4
+ + -
+ + -
OUT4
19
Co14=4.7F
L9 : 10H
D7 : SBS005
Co16=10F
22 R19=100 21 C15=0.047F
C16=2.2F
FB4
Ro9=100k
IN4-
Q102 : CPH3308 VO4=12V/100mA
CSOFT4 20
to STBY4
18
GND STBY
STBY4 STBY1 STBY2 STBY3 RT
Ro12=47k
Ro11=47k
Q4 : MCH3409
OSC
C8=560pF CT2 C7=560pF CT1
Q103 : CPH3215
29
8
10
23
C6=0.01F R1=5.6k
27
24
26
ILA07050
T1 = Sumida product L4 = TDK product: RLF5018-220MR63 L6 = TDK product: SLF6028-6R8M1R5 L9 = Toko product: 636CY-100M
Co17=0.47F
Co13=0.47F
No.8214-4/12
LA5683T
Application Circuit Examples 2
4-dry battery (3.5V to 6.5V) configuration
C4=0.022F C5=1F C17=10F
25
VREF
VCC
SCP
28
R3=18.66k R2=15k
VCC SCP DTC1 33 VREF CAPH1
9 Q3 : MCH3309
Co10=4.7F
L7 : 47H
Co13=10F
VO2=1.5V/200mA
C18=33pF
34 CAPL1 + + IN1FB1 35 + OUT1 36
C1=1000pF
to VO2
R4b=0k R4a=5.1k R5=10k
D6 : SBS004
30 R6=1k 31
C10=1F
C9=0.047F CSOFT1 32 CAPH2 4 CAPL2 + + 7 IN2FB2 3 + VS OUT2 2 1
C2=1000pF
to VO1
R7b=1.3 R8=5.1k R7a=27k
Q2 : MCH3309
Co7=4.7F
L4 : 22H
Co9=10F
VO1=3.3V/500mA
D5 : SBS004
R9=1k 6 C11=0.047F
R10= 10k C12=1F
CSOFT2 5
VBIAS
16
C3=10F
to VO3
R12b=1.1k R13=5.1k R12a=27k C19=33pF
R11=16k
14
DTC3
+ + -
+ + -
OUT3
T1
Co1=2.2F
4
D2 : SBS005
VO3A=15V/15mA
17
Co4=3.3F
12 C13=0.047F
C14=1F
FB3 7, 8 5
6
CSOFT3 13 Q1 : MCH3409 DTC4
D3 : SBS004
Co5=3.3F
Co3=3.3F
R14=100
11
IN3-
1
3 D1 : 2 SBS004
VO3=3.3V/140mA
VO3B=-7.5V/10mA
R17b=5.6k R18=5.1k R17a=110k
R15= 9.75k
to VO4
C20=33pF
R16=16k
15
+ + -
+ + -
OUT4
19
Co14=4.7F
L9 : 10H
D7 : SBS005
Co16=10F
22 R19=100 21 C15=0.047F
C16=2.2F
FB4
Ro9=100k
IN4-
Q102 : CPH3308 VO4=12V/100mA
Ro10=1k
CSOFT4 20 GND STBY OSC
STBY4 RT C7=560pF CT1 C8=560pF CT2
to STBY4
18
Ro12=47k
Ro11=47k
Q4 : MCH3409
Q103 : CPH3215
STBY1
STBY2
29
8
STBY3
10
23
C6=0.01F R1=5.6k
27
24
26
Co17=0.47F
ILA07051
T1 = Sumida product L4 = TDK product: RLF5018-220MR63 L7 = Toko product: 636CY-470M L9 = Toko product: 636CY-100M
No.8214-5/12
LA5683T
Application Circuit Examples 3
1-lithium ion battery (2.5V to 4.2V) configuration
C4=0.022F
C5=1F
25
28
R3=18.66k R2=15k
VCC SCP DTC1 33 VREF
9 Q3 : MCH3309
Co10=4.7F
C17=10F
VREF
VCC
SCP
L7 : 47H
Co13=10F
VO2=1.5V/200mA
C18=33pF
to VO2
R4b=0 R4a=5.1k R5=10k
+ + IN1FB1
+
OUT1 36
30 R6=1k 31
C10=1F
C9=0.047F CSOFT1 32 CAPH2 4 CAPL2 + + 7 IN2FB2 3 + VS OUT2 2 1
C2=1000pF
to VO1
R7b=1.3k R8=5.1k R7a=27k
C1=1000pF
CAPH1 34 CAPL1 35
D6 : SBS004
Q2 : MCH3309
Co7=4.7F L3 : 22H
Co8=4.7F
L4 : 15H
VO1=3.3V/500mA
D5 : SBS004
Co9=10F
R9=1k 6 C11=0.047F
R10= 10k C12=1F
CSOFT2 5
VBIAS
16
C3=10F
to VO3
R12b=1.1k R13=5.1k R12a=27k C19=33pF
R11=16k
14
DTC3
+ + -
+ + -
OUT3
T1
Co1=2.2F
4
D2 : SBS005
VO3A=15V/15mA
17
Co4=3.3F
12 C13=0.047F
R15= 9.75k C14=1F
FB3 7, 8 5
6
CSOFT3 13 Q1 : MCH3409 DTC4
D3 : SBS004
Co5=3.3F
Co3=3.3F
R14=100
11
IN3-
1
3 D1 : 2 SBS004
VO3=3.3V/140mA
VO3B=-7.5V/10mA
to VO4
R17b=5.6k R18=5.1k R17a=110k C20=33pF
R16=16k
15
+ + -
+ + -
OUT4
19
Co14=4.7F
L9 : 10H
D7 : SBS005
Co16=10F
22 R19=100 21 C15=0.047F
C16=2.2F
FB4
Ro9=100k
IN4-
Q102 : CPH3308 VO4=12V/100mA
Ro11=47k Ro10=1k
Q4 : MCH3409 to STBY4
CSOFT4 20 GND STBY OSC
STBY4
C7=560pF CT1 C8=560pF CT2
18
Ro12=47k
Q103 : CPH3215
STBY1
STBY2
STBY3
RT
29
8
10
23
C6=0.01F R1=5.6k
27
24
26
ILA07052
T1 = Sumida product L3 = TDK product: RLF5018-220MR63 L4 = TDK product: RLF5018-150MR63 L7 = Toko product: 636CY-470M L9 = Toko product: 636CY-100M
Co17=0.47F
No.8214-6/12
LA5683T
SCP Pin
Charging of the SCP block starts when FB1 to FB4 are set to a low level due to a load shorting and the protection circuit is activated if the block does not reset itself within the preset time tSCP (the protection circuit then turns off the whole OUT channels).
SCP[V]
Charge with ISCP
1.25[V]
Charging
tSCP
SCP operation
SCP Charging
CSCP x VSCP tSCP = ISCP
[S]
Dead Time Setup
* The dead time of channel 1 can be set by the voltage at DTC1.
VREF Waveform of triangular wave input to PWM comparator
VTH1_DTC DTC1 VDTC1 VTH2_DTC
VDTC1
The duty cycle D1 is calculated as follows:
D1 = VDTC1 - VTH2_DTC VTH1_DTC - VTH2_DTC x 100[ % ]
* Channel 2 The dead time of channe 2 is fixed internally and the setting duty is 100%.
No.8214-7/12
LA5683T
* Channel 3 The dead time of channel 3 can be set by the voltage at DTC3.
VREF
Waveform of triangular wave input to PWM comparator
VTH3_DTC DTC3 VDTC3 VDTC3 VTH4_DTC
The duty cycle D3 is calculated as follows:
D3 = VDTC3 - VTH4_DTC VTH3_DTC - VTH4_DTC x 100[ % ]
* Channel 4 The dead time of channel 4 can be set in the same manner as that of channel 3.
No.8214-8/12
LA5683T
Procedure for Setting the Software Start Time
* Channel 1 (the procedure is the same for channels 2, 3, and 4.) The software start time of channel 1 is set by the capacitance of the capacitor connected between pin CSOFT1 to CSOFT4 and GND.
* VB=0.5[V]
* VSOFT
VCSOFT [V] Software start time tSOFT [S] Charging
Set output voltage (VO): constant
Set output voltage (VO)
VCC
IN-
CSOFT CSOFT
t SOFT = -CSOFT x R SF 1n(1 -
VB R SF x ISF
) [S]
* The formula is for channel 1. The software start time for channels 2 to 4 can be calculated in the same manner.
VB=0.5V
RSF 200k
ISF=3.95A
No.8214-9/12
LA5683T
CT1 and CT2
The waveform of CT1 is 180 degrees out of phase with that of CT2. Their frequency cannot be set independently. The capacitance of the capacitors to be connected to pins CT1 and CT2 must be the same. * Setting the oscillation frequency (1) The oscillation frequency of the oscillator can be set by selecting the capacitance of the capacitors connected to pins CT1 and CT2 (see Figure 1). (2) The oscillation frequency can also be determined by the resistance of the resistor connected to the RT pin (see Figure 2).
2000 1800
Figure 1 Oscillation Frequency vs. Timing Capacitance Characteristics Ta=25C Reference data
1400
Figure 2 Oscillation Frequency vs. Timing Resistance Characteristics Reference data Ta=25C
VCC=3.0V CT1/CT2=560pF
Oscillation frequency, f - kHz
1600 1400 1200 1000 800 600 400 200 0 7 100 2 3 5 7 1k
CT1 and CT2 have the same capacitance.
Oscillation frequency, f - kHz
VCC=3.0V RT=5.6k
1200
1000
800
600
400
200 0 1.0
2
3
5
Capacitors CT1 and CT2 Capacitance - pF
10k ILA07008
7
2
3
5
7
10
2
3
5
Resistor RT Resistance - k
ILA07009
Sample Circuits
Sample Circuit That Makes Use of VBIAS (1) This IC can be used to implement the circuit that is shown below since the power to the channels 3 and 4 output stages is supplied via VBIAS. Apply VO1 that is dropped to 3.3V in channel 1 to VBIAS. A voltage of approx. VBIAS3-1 volt develops at VOUT3, so that the IC can drive MOS transistors in a low-voltage environment like this sample circuit.
VBIAS
VCC L Schottky barrier diode VO3=3.3V OUT3 SW VOUT3 MCH3409 VCC VBIAS Circuit Example 1 MCH3309 to IN3- Schottky barrier diode L VO1=3.3V
to IN1-
to OUT1
No.8214-10/12
LA5683T
Sample Circuit That Makes Use of VBIAS (2) This IC can be used to implement the circuit that is shown below since the power to the channels 3 and 4 output stages is supplied via VBIAS. Apply the power voltage to VBIAS through the path that is made up of VCC, L to Schottky diode (through path formation). Then feed the stabilized voltage VO3 that is raised to 3.3V in channel 3 to VBIAS. A voltage of approx. VBIAS3-1 volt develops at VOUT3, so that the IC can drive MOS transistors in a low-voltage environment like this sample circuit.
Fed to VBIAS VBIAS Schottky barrier diode VCC
L OUT3 SW VOUT3 MCH3409
VO3=3.3V
to IN3-
VBIAS Circuit Example 2
Using the IC in a Step-down Circuit (CH1 and CH2)
The IC detects a short-circuit condition and activates the SCP when VCC falls below the preset voltage VO+VF in such a step-down application as the one shown below.
VF (diode forward voltage) VCC VO1
VO1
VF
IN+ SCP activated
VCC
OUT
1.8V
VCC
When stepping down VCCNo.8214-11/12
LA5683T
Using the IC in a Step-up Circuit (CH3 and CH4)
In a step-up application like the one shown below, a through path consisting of VCC, L, and D is formed when STBY is set off and a voltage normally remains present at VO. * Although the STBY off-time through path in the application circuit example is cut by a MOSFET, a voltage remains present at VO after an SCP operation performed with STBY set on.
VCC L IOFF VO D IN- OUT
Figure Used with a Chopper Type Step-up Circuit
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.8214-12/12

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